Storage Class Memory: Coming to a Datacenter Near You
Report No. FI-NVM-SCM-1115, November 2015
In 2007, the first NAND flash-based SSDs entered the datacenter as a higher performing storage than disk with much lower cost than DRAM. By inserting NAND flash, the huge latency gap between DRAM and disk was effectively reduced by a factor of 10, resulting in the explosive growth of NAND flash in the datacenter seen in recent years. However, there still remains an approximately 1000x gap in latency between DRAM and NAND providing an opportunity for another memory technology to come in with near DRAM-like performance and near NAND-like cost.
The recent announcement by Intel and Micron Technology of a 3D XPoint memory represents such a technology and has the potential to disrupt the memory/storage hierarchy. Storage Class Memory: Coming to a Datacenter Near You provides a comprehensive analysis of the potential candidates for Storage Class Memories and the opportunities and challenges presented by SCM in the datacenter.
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